Universal non-polar switching in carbon-doped transition metal oxides (TMOs) and post TMOs

Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with carbon, show non-volatile current–voltage characteristics, which are both universal repeatable. We have shown spectroscopic evidence of the introduction carbon-based impurity states inside existing larger bandgap effectively creating a smaller bandgap, we suggest could be Mott–Hubbard-like correlation effects. Our findings indicate new insights for yet to understood unipolar nonpolar resistive switching in TMOs PTMOs. that device is not thermal-energy dependent developed an electronic-dominated model allows extreme temperature operation (from 1.5 423 K) state retention up 673 K 1 h bake. Importantly, optimized technology industrial process demonstrated integrated 1-transistor/1-resistor arrays kbit 47 nm devices on 300 mm wafers advanced node CMOS-compatible correlated electron random access memory. These operate 2 ns write pulses retain memory 200 °C 24 h. The collection attributes shown, including scalability state-of-the-art dimensions, low high temperatures, fast write, reduced stochasticity as compared filamentary memories, such random-access shows potential highly capable two-terminal back-end-of-line